Wafer process Carrier Tape
Using SEM to confirm the surface which visually inspection you won’t find any residue remains ( x25~2000 times)
- B-stage base
Or
C-stage base - Tape apply to
do Plasma treatment - Apply and Press
- 12kgf/cm2120℃ x 2minHot press
- 180℃ x 1h
Heating and dry - Peel of Tape
| Gas transmittance (cc.cm/cm2.sec.atm) |
Abrasion Tester | Affection of Plasma | |
| Silicone Series | 400 |  ~X |
Big |
| high heat resistance Non-Silicone | 10 | ○ | Small |
| Urethane Series | 2 | ◎ | Small |
High Heat-resistance non-silicone, plasma treatment and heating, the residue remains are not easily left behind
